2N6666 transistor equivalent, silicon pnp darlington power transistor.
*Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SY.
*High DC Current Gain-
: hFE = 1000(Min)@ IC= -3A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.0V(Max)@ IC= -3A
*Complement to Type 2N6386
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